Proceedings of International Conference on Applied Innovation in IT
2026/03/31, Volume 14, Issue 1, pp.469-476

Data-Driven Gas Sensing Analysis of Titanium-Doped Cadmium Oxide Thin Films


Muna Ahmed Issa, Nazar Abdulmahdi Jabir, Athraa Naji Jameel, Muhaned Zaidi and Hassan Hadi Darwoysh


Abstract: TiO2: Sn thin films were prepared using the plasma jet technique at different discharge voltages (12, 13, and 14 kV). X-ray diffraction analysis exhibited that all samples were cubic polycrystalline with a dominant peak at the (101) plane. The grain size was expanded from 16.93 nm to 19.39 nm by increasing the discharge voltage. However, it caused a decrease in dislocation density (δ) values from 34.82 to 26.59. In addition, strain (ε) is decreased from 20.47 to 17.88. The AFM images showed an average grain size of approximately 81.79 –52.64nm, and the root mean square roughness (Rrms) decreased from 3.31 nm to 5.98 nm when the discharge voltage was increased to 14 kV. Furthermore, the decrease in transmittance values is due to the higher discharge voltage applied during film growth. The band gap was slightly modified by the change in plasma condition, with values of 3.15 eV at 13 kV and 3.0 eV at 14 kV. Results showed that the extinction coefficient and refractive index of the prepared samples decrease with increasing discharge voltage. TiO₂:Sn thin films showed voltage-dependent sensing; 12 kV films had higher resistance and better NO₂ adsorption than 14 kV films. TiO₂:Sn thin films show decreasing NO₂ sensitivity with higher discharge voltage, due to increased charge carrier recombination suppressing the response.

Keywords: Tio2 Thin Films, Plasma Jet, XRD, AFM, Band Gap, Resistance, Sensitivity.

DOI: Under indexing

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