Proceedings of International Conference on Applied Innovation in IT
2026/03/31, Volume 14, Issue 1, pp.397-404

Characterization and Sensing Potential of Indium Oxide-Vanadium Oxide Thin Films for Smart Devices


Ahmed Yaseen, Ziad T. Khodair and Nadia Mohammed Jassim


Abstract: In this study, the effects of indium oxide (In2O3) mixing in the crystal lattice structure of vanadium oxide(V2O5) were investigated and fabricated by a facile and cost-effective method via the Pulsed Laser Deposition (PLD) technique using the following constant parameters: energy (280 mJ/pulse), frequency (1 Hz), number of pulses (700 pulses), and the angle of incidence was 45° with 1064 nm laser wavelengths, 100°C temperature substrate and annealing temperature (400°C). X-ray diffraction (XRD) analysis revealed the formation of a cubic phase for In2O3. Since the intensity of the phase and angle 2θ match the Miller indices, the thin film's structure will be more crystalline at a laser wavelength of 1064 nm. And an orthorhombic phase for V2O5. It was observed that the lattice parameters of the composite sample were decreased compared with the pure In2O3, but the crystallite sizes of sample V2O5 80% were increased as a result of the substitution of vanadium in the crystal lattice of In2O3. The morphological characteristics of the Field Emission Scanning Electron Microscopy (FE-SEM) showed that all samples have spherical shapes, and their distribution sizes are between 31.7nm for In2O3, 208.3 nm for V2O5, and 176.6nm for V2O5 80% ratio and thickness 280.2nm,651nm,301nm respectively. It was found that the average sizes of nanoparticles decreased due to the presence of an amount of indium oxide. To characterize the optical characteristics (UV-vis) spectra, a decrease was found in the band gap(2.83ev) of the In2O3 20% -V2O5 80% sample compared with energy gap(3.31ev) of pure In2O3.

Keywords: In2O3-V2O5, PLD-process, TCO material, In2O3-V2O5 nanocomposites exhibit excellent optoelectronic properties.

DOI: Under indexing

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