A technology for producing nickel atom clusters in the volume of a silicon crystal lattice with controlled parameters has been developed. Solar cells based on silicon containing nickel atom clusters have been manufactured and their parameters have been determined. It has been established that the presence of nickel atom clusters in the lattice allows for a significant expansion of the spectral sensitivity region of silicon solar cells toward the IR spectrum to 4 μm. A new technological method for producing efficient solar cells (SC) with stable parameters and maximum efficiency has been proposed. Technology of creation of clusters of nickel atoms in the silicon crystal lattice with adjustable parameters was developed. Solar cells based on silicon containing clusters of nickel atoms were developed and their performances were determined. It is found that the presence of clusters of nickel atoms in the lattice allows to significantly broaden the spectral sensitivity region of the silicon cells toward the IR spectrum to 4 microns. A new technological method of manufacturing effective solar cells with stable parameters and maximum coefficient of performance has been revised.
M.G. Milvidsky and V.V. Chaldyshev, "Nanosized atomic clusters in semiconductors – a new approach to the formation of material properties," Semiconductors, vol. 32, no. 5, pp. 513-518, 1998.
M.K. Bakhadyrkhanov, G.Kh. Mavlonov, K.S. Ayupov, and S.B. Isamov, "Negative magnetoresistance in silicon with manganese atom complexes," Semiconductors, vol. 44, no. 9, pp. 1181-1184, 2010.
B.A. Abdurakhmanov, K.S. Ayupov, M.K. Bahadyrkhanov, Kh.M. Iliev, D.T. Bobonov, N.F. Zikrillaev, Z.M. Saparniyazova, and A. Toshev, "Low-temperature diffusion of impurities in silicon," Reports of the Academy of Sciences of the Republic of Uzbekistan, no. 4, pp. 34-38, 2010.
E.B. Saitov and N.F. Zikrillayev, "Photovoltaic Effect in Silicon with Schottky Micro-Barriers Created on the Basis of Nickel Impurity Atoms and Spectral Characteristics," European Journal of Molecular & Clinical Medicine, vol. 8, no. 1, pp. 982-992, 2021.
K.A. Valiev, Yu.I. Pashintsev, and G.V. Petrov, Metal-Semiconductor Contacts in Electronics. Moscow: Sovetskoe Radio, 1981.
S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ: John Wiley & Sons, 2007.
D.K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. Hoboken, NJ: John Wiley & Sons, 2006.
W. Shockley, Electrons and Holes in Semiconductors. Princeton: D. Van Nostrand Company, 1950.
J.I. Pankove, Optical Processes in Semiconductors. New York: Dover Publications, 1975.
M.K. Bakhadyrkhanov, S.A. Valiev, N.F. Zikrillaev, S.V. Koveshnikov, E.B. Saitov, and S.A. Tachilin, "Silicon photovoltaic cells with clusters of nickel atoms," Applied Solar Energy, vol. 52, no. 4, pp. 278-281, 2016.
B.G. Streetman and S.K. Banerjee, Solid State Electronic Devices, 7th ed. Boston: Pearson Education, 2015.
J. Nelson, The Physics of Solar Cells. London: Imperial College Press, 2003.
M.A. Green, Solar Cells: Operating Principles, Technology and System Applications. Englewood Cliffs, NJ: Prentice-Hall, 1982.
A. Luque and S. Hegedus, Handbook of Photovoltaic Science and Engineering, 2nd ed. Chichester: Wiley, 2011.